| High band-gap opto-electronic device and method for making same | |
| KUO, CHIH-PING; FLETCHER, ROBERT M.; OSENTOWSKI, TIMOTHY D. | |
| 1995-11-15 | |
| 著作权人 | HEWLETT-PACKARD COMPANY |
| 专利号 | EP0378919B1 |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | High band-gap opto-electronic device and method for making same |
| 英文摘要 | A high band-gap opto-electronic device is formed by epitaxially growing the device section (150,350,450,550) in a lattice-matched (AlxGa1-x)yIn1-yP-GaAs system. The band-gap of the epitaxial layer increases with x. Instead of growing the device section (150,350,450,550) directly on the GaAs substrate (100,300,400,500), a layer of (AlxGa1-x)yIn1-yP, (150;320,330,340;420,430;530,540) graded in x and in temperature while maintaining substantially y=0.5, is grown as a transitional layer. The high band-gap device structures include homojunctions, heterojunctions and particularly a separate confinement quantum well heterostructures. Various embodiments of the invention include devices on absorbing substrates and on transparent substrates, and devices incorporating strained-layer superlattices. |
| 公开日期 | 1995-11-15 |
| 申请日期 | 1989-12-18 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/45922]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HEWLETT-PACKARD COMPANY |
| 推荐引用方式 GB/T 7714 | KUO, CHIH-PING,FLETCHER, ROBERT M.,OSENTOWSKI, TIMOTHY D.. High band-gap opto-electronic device and method for making same. EP0378919B1. 1995-11-15. |
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