Low-dimensional plasmon light emitting device
NAGAO, TADAAKI
2005-09-20
著作权人JAPAN SCIENCE AND TECHNOLOGY CORPORATION
专利号US6946674
国家美国
文献子类授权发明
其他题名Low-dimensional plasmon light emitting device
英文摘要A low-dimensional plasmon-light emitter for converting an inputted electric energy luminescence with an arbitrary energy over a broad range. The emitter has a low-dimensional conductive structure incorporated inside or in a surface layer of a semiconductor or dielectric. A periodic nanostructure is incorporated in the vicinity of or inside the low-dimensional conductive structure. The low-dimensional conductive structure may be a quantum well formed inside a semiconductor or dielectric, a space-charge layer formed on a surface or heterojunction of a semiconductor or dielectric, or a surface or interface electronic band with high carrier density formed on a surface or heterojunction of a semiconductor or dielectric. The periodic nanostructure is selected from a periodic structure formed by vapor-deposition or etching of fine metallic wires, a periodic structure of a film formed on surfaces with atomic steps, or a periodic structure self-organized during epitaxial growth or polymerization of an organic molecule or polymer.
公开日期2005-09-20
申请日期2002-03-11
状态失效
内容类型专利
源URL[http://ir.opt.ac.cn/handle/181661/45900]  
专题半导体激光器专利数据库
作者单位JAPAN SCIENCE AND TECHNOLOGY CORPORATION
推荐引用方式
GB/T 7714
NAGAO, TADAAKI. Low-dimensional plasmon light emitting device. US6946674. 2005-09-20.
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