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	Optical semiconductor element and method of manufacturing the same
	TAKABAYASHI, KAZUMASA; YAMAMOTO, TSUYOSHI; KIMURA, TOKUHARU
	2017-07-04
著作权人	FUJITSU LIMITED
专利号	US9698570
国家	美国
文献子类	授权发明
其他题名	Optical semiconductor element and method of manufacturing the same
英文摘要	A quantum dot laser includes a GaAs substrate, a quantum dot active layer which has a barrier layer of GaAs and quantum dots, a GaAs waveguide core layer which is joined to the quantum dot active layer, and a lower cladding layer and an upper cladding layer which sandwich the quantum dot active layer and the GaAs waveguide core layer. The GaAs waveguide core layer extends from a front end of the quantum dot active layer and has a thickness which gradually decreases in a direction to depart from the front end of the quantum dot active layer, a refractive index of a first cladding layer is higher than a refractive index of a second cladding layer. With this structure, expansion of the optical mode diameter that is more than necessary is inhibited to prevent leakage of light, thereby obtaining sufficient optical output.
公开日期	2017-07-04
申请日期	2016-07-08
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/45836]
专题	半导体激光器专利数据库
作者单位	FUJITSU LIMITED
推荐引用方式 GB/T 7714	TAKABAYASHI, KAZUMASA,YAMAMOTO, TSUYOSHI,KIMURA, TOKUHARU. Optical semiconductor element and method of manufacturing the same. US9698570. 2017-07-04.

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