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	Nitride based semiconductor device and fabrication method for the same
	NAKAGAWA, DAISUKE; TANAKA, YOSHINORI; MURAYAMA, MASAHIRO; FUJIMORI, TAKAO; KOHDA, SHINICHI
	2012-03-27
著作权人	ROHM CO., LTD.
专利号	US8144743
国家	美国
文献子类	授权发明
其他题名	Nitride based semiconductor device and fabrication method for the same
英文摘要	A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide layer; a p-type GaN based guide layer placed on the active layer; an electron block layer placed on the p-type GaN based guide layer; a stress relaxation layer placed on the electron block layer; and a p-type cladding layer placed on the stress relaxation layer, and the nitride based semiconductor device alleviates the stress occurred under the influence of the electron block layer, does not affect light distribution by the electron block layer, reduces threshold current, can suppress the degradation of reliability, can suppress degradation of the emitting end surface of the laser beam, can improve the far field pattern, and is long lasting, and fabrication method of the device is also provided.
公开日期	2012-03-27
申请日期	2009-03-04
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/45793]
专题	半导体激光器专利数据库
作者单位	ROHM CO., LTD.
推荐引用方式 GB/T 7714	NAKAGAWA, DAISUKE,TANAKA, YOSHINORI,MURAYAMA, MASAHIRO,et al. Nitride based semiconductor device and fabrication method for the same. US8144743. 2012-03-27.

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