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	Application-oriented nitride substrates for epitaxial growth of electronic and optoelectronic device structures
	SHARMA, TARUN KUMAR; TOWE, ELIAS
	2014-04-15
著作权人	SHARMA, TARUN KUMAR
专利号	US8699537
国家	美国
文献子类	授权发明
其他题名	Application-oriented nitride substrates for epitaxial growth of electronic and optoelectronic device structures
英文摘要	The present invention provides an applications-oriented nitride compound semiconductor substrate, and devices based on it, whose lattice constant can be tuned to closely match that of any nitride thin film or films deposited on it for specific electronic or optoelectronic device applications. Such application-oriented nitride substrates, which can be composed of ternary InxGa1-xN, AlyIn1-yN, AlzGa1-zN, or quaternary AlaInbGa1-a-bN alloy compounds, minimize lattice-mismatch-induced dislocations and defects between the epitaxial films and the substrate on which the device layers are grown, leading to substantially improved device performance.
公开日期	2014-04-15
申请日期	2010-10-28
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/45644]
专题	半导体激光器专利数据库
作者单位	SHARMA, TARUN KUMAR
推荐引用方式 GB/T 7714	SHARMA, TARUN KUMAR,TOWE, ELIAS. Application-oriented nitride substrates for epitaxial growth of electronic and optoelectronic device structures. US8699537. 2014-04-15.

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