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	Method and apparatus for long wavelength semiconductor lasers
	DAPKUS, PAUL DANIEL
	2003-09-16
著作权人	JDS UNIPHASE CORPORATION
专利号	US6621842
国家	美国
文献子类	授权发明
其他题名	Method and apparatus for long wavelength semiconductor lasers
英文摘要	A W quantum well structure for active region of semiconductor lasers for long wavelength emission of photons. The energy band lineups in the disclosed heterostructures achieve emission at wavelengths of 3 mum or greater. The W quantum well structure and exemplary materials can be applied to any semiconductor laser including a vertical cavity surface emitting laser (VCSEL). The active region is comprised of one or more sets of triad layers of GaAs1-xNx/GaAs1-ySby/GaAs1-xNx to provide the W quantum well structure. The energy band of these materials provides a staggered band alignment which causes electrons and holes to be confined in adjacent layers to one another. Because the wavefunctions associated with these materials tunnel into adjacent layers, optical emission at a longer wavelength is achievable than otherwise available from the energy gaps of the constituent materials alone.
公开日期	2003-09-16
申请日期	1999-10-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/45564]
专题	半导体激光器专利数据库
作者单位	JDS UNIPHASE CORPORATION
推荐引用方式 GB/T 7714	DAPKUS, PAUL DANIEL. Method and apparatus for long wavelength semiconductor lasers. US6621842. 2003-09-16.

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