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	Method of making surface emission type semiconductor laser
	MORI, KATSUMI; ASAKA, TATSUYA; IWANO, HIDEAKI; KONDO, TAKAYUKI
	1996-12-24
著作权人	SEIKO EPSON CORPORATION
专利号	US5587335
国家	美国
文献子类	授权发明
其他题名	Method of making surface emission type semiconductor laser
英文摘要	In order to manufacture a surface emission type semiconductor laser, a plurality of semiconductor layers including a multilayered semiconductor mirror, a cladding layer, an active layer and other layers are sequentially formed on a substrate through the organic metal vapor growth method. A photoresist mask is then formed on the semiconductor layers. At least the cladding layer in the semiconductor layers is anisotropically etched by the use of the photoresist mask. At least one column-like portion is thus formed to have sidewalls extending perpendicular to the substrate and to guide the light in a direction perpendicular to the substrate. Thereafter, a buried layer including a single layer formed therein at an area covering at least the sidewalls of the column-like portion is formed around the column-like portion. A multilayered dielectric mirror is deposited in the column-like portion on the light exit end thereof. The multilayered dielectric mirror is disposed at the light exit port of a light exit side electrode. To increase the reflectivity below the light exit side electrode, a multilayered semiconductor mirror may be formed in the column-like portion at a position nearer the light exit side than the cladding layer.
公开日期	1996-12-24
申请日期	1995-07-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/44573]
专题	半导体激光器专利数据库
作者单位	SEIKO EPSON CORPORATION
推荐引用方式 GB/T 7714	MORI, KATSUMI,ASAKA, TATSUYA,IWANO, HIDEAKI,et al. Method of making surface emission type semiconductor laser. US5587335. 1996-12-24.

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