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	Semiconductor laser including disordered window regions
	NAGAI, YUTAKA
	1998-06-09
著作权人	MITSUBISHI DENKI KABUSHIKI KAISHA
专利号	US5764669
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser including disordered window regions
英文摘要	A method for fabricating a semiconductor laser device includes successively epitaxially growing a quantum-well structure active layer and a second conductivity type AlrGa1-rAs first upper cladding layer on a first conductivity type GaAs substrate, forming an SiO2 film on a region in a vicinity of the laser resonator facet on the second conductivity type first cladding layer, annealing, thereby absorbing Ga from the second conductivity type first upper cladding layer to form and diffuse vacancies to reach the quantum-well structure active layer, thereby disordering the quantum-well structure active layer in a region in the vicinity of the laser resonator facet. Therefore, it is possible to form a window structure by disordering the quantum-well structure active layer without generating crystal transitions. In addition, there is no necessity of implanting Si ions so as to diffuse those ions to form a window structure, and there arises no unlikelihood of disordering that because the Si ions are trapped during their diffusion by crystal defects formed by the ion implantation, whereby a semiconductor laser device provided with a desired window structure can be produced with high reproducibility.
公开日期	1998-06-09
申请日期	1996-01-11
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/44570]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	NAGAI, YUTAKA. Semiconductor laser including disordered window regions. US5764669. 1998-06-09.

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