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	Method for fabricating a semiconductor laser device using (AlxGa1-x)yIn1-yP semiconductor clad layers
	TAKAMORI, AKIRA; IDOTA, KEN; UCHIYAMA, KIYOSHI; NAKAJIMA, MASATO
	1993-03-16
著作权人	MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
专利号	US5194400
国家	美国
文献子类	授权发明
其他题名	Method for fabricating a semiconductor laser device using (AlxGa1-x)yIn1-yP semiconductor clad layers
英文摘要	A method for fabricating an AlGaInP-based visible light laser device by molecular beam epitaxy is described. In this method, a upper clad layer of (AlxGa1-x)yIn1-yP wherein x and y are, respectively, in the ranges of from 0.5 to 1 and from 0.47 to 0.53 is covered with a protective layer serving also as an etching prevenive layer so that a grooved-type structure using the (AlxGa1-x)yIn1-yP clad layer can be fabricated without involving degradation of the clad layer by contamination with oxygen, nitrogen and the like.
公开日期	1993-03-16
申请日期	1991-11-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/44558]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
推荐引用方式 GB/T 7714	TAKAMORI, AKIRA,IDOTA, KEN,UCHIYAMA, KIYOSHI,et al. Method for fabricating a semiconductor laser device using (AlxGa1-x)yIn1-yP semiconductor clad layers. US5194400. 1993-03-16.

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