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	Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well
	SCHETZINA, JAN FREDERICK
	2000-04-04
著作权人	NORTH CAROLINA STATE UNIVERSITY
专利号	US6046464
国家	美国
文献子类	授权发明
其他题名	Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well
英文摘要	An integrated heterostructure of Group III-V nitride compound semiconductors is formed on a multicomponent platform which includes a substrate of monocrystalline silicon carbide and a non-nitride buffer layer of monocrystalline zinc oxide. The zinc oxide may be formed by molecular beam epitaxy (MBE) using an MBE effusion cell containing zinc, and a source of atomic oxygen, such as an MBE-compatible oxygen plasma source which converts molecular oxygen into atomic oxygen. An ohmic contact for a semiconductor device formed of Group III-V nitride compound semiconductor materials including a layer of aluminum nitride or aluminum gallium nitride, includes a continuously graded layer of aluminum gallium nitride and a layer of gallium nitride or an alloy thereof on the continuously graded layer. The continuously graded layer eliminates conduction or valence band offsets. A multiple quantum well may also be used instead of the continuously graded layer where the thickness of the layers of gallium nitride increase across the multiple quantum well. The ohmic contacts may be used for Group III-V nitride laser diodes, light emitting diodes, electron emitters, bipolar transistors and field effect transistors.
公开日期	2000-04-04
申请日期	1997-08-13
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/44544]
专题	半导体激光器专利数据库
作者单位	NORTH CAROLINA STATE UNIVERSITY
推荐引用方式 GB/T 7714	SCHETZINA, JAN FREDERICK. Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well. US6046464. 2000-04-04.

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