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	Semiconductor laser diode with integrated heating region
	ZHENG, JUN; ANSELM, KLAUS ALEXANDER; ZHANG, HUANLIN; CHANG, HUNG-LUN
	2016-05-17
著作权人	APPLIED OPTOELECTRONICS, INC.
专利号	US9343870
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser diode with integrated heating region
英文摘要	A semiconductor laser diode with integrated heating generally includes a lasing region and a heating region integrated into the same semiconductor structure or chip. The lasing region and the heating region include first and second portions, respectively, of the semiconductor layers forming the semiconductor structure and include first and second portions, respectively, of the active regions formed by the semiconductor layers. Separate laser and heater electrodes are electrically connected to the respective lasing and heating regions for driving the respective lasing and heating regions with drive currents. The heating region may thus be driven independently from the lasing region, and heat may be conducted through the semiconductor layers from the heating region to the lasing region allowing the temperature to be controlled more efficiently.
公开日期	2016-05-17
申请日期	2014-09-30
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/44541]
专题	半导体激光器专利数据库
作者单位	APPLIED OPTOELECTRONICS, INC.
推荐引用方式 GB/T 7714	ZHENG, JUN,ANSELM, KLAUS ALEXANDER,ZHANG, HUANLIN,et al. Semiconductor laser diode with integrated heating region. US9343870. 2016-05-17.

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