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	Quantum thin line producing method and semiconductor device employing the quantum thin line
	FUKUSHIMA, YASUMORI; ASHIDA, TSUTOMU
	2002-02-26
著作权人	SHARP KABUSHIKI KAISHA
专利号	US6351007
国家	美国
文献子类	授权发明
其他题名	Quantum thin line producing method and semiconductor device employing the quantum thin line
英文摘要	There is provided a quantum thin line producing method capable of forming a quantum thin line that has good surface flatness of silicon even after formation of quantum thin line and a complete electron confining region with good controllability as well as a semiconductor device employing the quantum thin line. A region of a nitride film 3 which covers a semiconductor substrate 1 on which a stepped portion 2 is formed is etched back with masking, consequently exposing an upper portion of a semiconductor substrate Next, an oxide film 5 is formed by oxidizing the exposed portion of the upper portion of the semiconductor substrate 1, and a linear protruding portion 6 is formed on the semiconductor substrate along a side surface of the nitride film 3. Next, the oxide film 5 on the protruding portion 6 is partially etched to expose a tip of the protruding portion 6. Next, a thin line portion 7 is made to epitaxially grow on the exposed portion at the tip of the protruding portion 6. Then, after removing the nitride film 3 and the oxide film 5, there is formed a quantum thin line 7a that is insulated and isolated from the semiconductor substrate 1 by an oxide film 5A formed through oxidation of the semiconductor substrate
公开日期	2002-02-26
申请日期	2000-02-10
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/44537]
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	FUKUSHIMA, YASUMORI,ASHIDA, TSUTOMU. Quantum thin line producing method and semiconductor device employing the quantum thin line. US6351007. 2002-02-26.

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