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	Visible double heterostructure-semiconductor laser
	YANO, SEIKI; YAMAMOTO, SABURO; TAKIGUCHI, HARUHISA; KANEIWA, SHINJI
	1987-12-08
著作权人	SHARP KABUSHIKI KAISHA
专利号	US4712219
国家	美国
文献子类	授权发明
其他题名	Visible double heterostructure-semiconductor laser
英文摘要	A visible double heterostructure-semiconductor laser comprising an InGaAs, InAlP, InAlAs, InAlSb or InGaSb layer, a first cladding layer on the InGaAs, InAlP, InAlAs, InAlSb or InGaSb layer; an active layer on the first cladding layer and a second cladding layer on the active layer, wherein a mixed crystal of, respectively InGaAs, InAlP, InAlAs, InAlSb or InGaSb is used, as a substrate crystal for growing of said InGaAs, InAlP, InAlAs, InAlSb or InGaSb layer thereon, and the composition ratio of the substrate crystal and of each of the layers is selected so as to result in the approximate coincidence between the lattice constant of the substrate crystal and the lattice constant of each of these layers, an energy difference of 0.2 eV or more between the direct transition and the indirect transition within said active layer, and an energy difference of 0.2 eV or more between the active layer and either of the first or the second cladding layers.
公开日期	1987-12-08
申请日期	1985-03-26
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/44449]
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	YANO, SEIKI,YAMAMOTO, SABURO,TAKIGUCHI, HARUHISA,et al. Visible double heterostructure-semiconductor laser. US4712219. 1987-12-08.

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