| High power semiconductor laser device | |
| MA, BYUNG JIN; BAE, SEONG JU | |
| 2008-12-16 | |
| 著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
| 专利号 | US7466737 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | High power semiconductor laser device |
| 英文摘要 | In a high power semiconductor laser device, first and second conductivity type clad layers are provided. An active layer is interposed between the first and second conductivity type clad layers. A first optical guide layer is disposed between the first conductivity type clad layer and the active layer. A second optical guide layer is disposed between the second conductivity clad layer and the active layer. Also, an intentionally undoes optical loss confinement region is formed in a portion of at least one of the first and second conductivity type clad layers overlapping laser beam distribution. |
| 公开日期 | 2008-12-16 |
| 申请日期 | 2007-02-22 |
| 状态 | 授权 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44421]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | MA, BYUNG JIN,BAE, SEONG JU. High power semiconductor laser device. US7466737. 2008-12-16. |
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