QQ客服 官方微博 反馈留言

	Method of making multiple wavelength p-n junction semiconductor laser with separated waveguides
	PAOLI, THOMAS I.
	1991-12-10
著作权人	XEROX CORPORATION
专利号	US5071786
国家	美国
文献子类	授权发明
其他题名	Method of making multiple wavelength p-n junction semiconductor laser with separated waveguides
英文摘要	A multiple wavelength semiconductor laser with two active layers separated by either a p-cladding layer of a p-n junction cladding layers, A p-disordered region and a n-disordered region extend through one of the active layers and into the intermediate cladding layer. A lateral waveguide is formed between the disordered regions in the active layer and a deep waveguide is formed beneath the p-disordered region in the other active layer. Since both active layers generate lightwaves at different wavelengths, forward-biasing the p-disordered region can cause either or both waveguides to emit radiation but at different wavelengths. The deep waveguide can also be a buried heterostructure laser.
公开日期	1991-12-10
申请日期	1990-10-20
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/44420]
专题	半导体激光器专利数据库
作者单位	XEROX CORPORATION
推荐引用方式 GB/T 7714	PAOLI, THOMAS I.. Method of making multiple wavelength p-n junction semiconductor laser with separated waveguides. US5071786. 1991-12-10.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。