QQ客服 官方微博 反馈留言

	Intersubband semiconductor lasers with enhanced subband depopulation rate
	BELENKY, GREGORY; DUTTA, MITRA; KISIN, MIKHAIL; LURYI, SERGE; STROSCIO, MICHAEL
	2007-12-18
著作权人	UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY
专利号	US7310361
国家	美国
文献子类	授权发明
其他题名	Intersubband semiconductor lasers with enhanced subband depopulation rate
英文摘要	Intersubband semiconductor lasers (ISLs) are of great interest for mid-infrared (2-20 μm) device applications. These semiconductor devices have a wide range of applications from pollution detection and industrial monitoring to military functions. ISLs have generally encountered several problems which include slow intrawell intersubband relaxation times due to the large momentum transfer and small wave-function overlap of the initial and final electron states in interwell transitions. Overall, the ISL's of the prior art are subject to weak intersubband population inversion. The semiconductor device of the present invention provides optimal intersubband population inversion by providing a double quantum well active region in the semiconductor device. This region allows for small momentum transfer in the intersubband electron-phonon resonance with the substantial wave-function overlap characteristic of the intersubband scattering.
公开日期	2007-12-18
申请日期	2004-09-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/44385]
专题	半导体激光器专利数据库
作者单位	UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY
推荐引用方式 GB/T 7714	BELENKY, GREGORY,DUTTA, MITRA,KISIN, MIKHAIL,et al. Intersubband semiconductor lasers with enhanced subband depopulation rate. US7310361. 2007-12-18.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。