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	Method for producing semiconductor and semiconductor laser device
	TSUJIMURA, AYUMU; HASEGAWA, YOSHIAKI; ISHIBASHI, AKIHIKO; KIDOGUCHI, ISAO; BAN, YUZABURO
著作权人	PANNOVA SEMIC, LLC
专利号	US20010008285A1
国家	美国
文献子类	发明申请
其他题名	Method for producing semiconductor and semiconductor laser device
英文摘要	The method for producing a semiconductor of the present invention grows a compound semiconductor on a substrate held by a susceptor provided, in a reaction chamber in accordance with a metalorganic vapor phase epitaxy technique. The method includes the steps of: supplying a Group III source gas containing indium and a Group V source gas containing nitrogen into the reaction chamber; and mixing the Group III and Group V source gases, supplied into the reaction chamber, with each other, and supplying a rare gas as a carrier gas into the reaction chamber so as to carry the mixed source gas onto the upper surface of the substrate.
公开日期	2001-07-19
申请日期	2001-03-02
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/44055]
专题	半导体激光器专利数据库
作者单位	PANNOVA SEMIC, LLC
推荐引用方式 GB/T 7714	TSUJIMURA, AYUMU,HASEGAWA, YOSHIAKI,ISHIBASHI, AKIHIKO,et al. Method for producing semiconductor and semiconductor laser device. US20010008285A1.

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