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	Protection for the epitaxial structure of metal devices
	FAN, FENG-HSU; DOAN, TRUNG TRI; TRAN, CHUONG ANH; CHU, CHEN-FU; CHENG, CHAO-CHEN; CHU, JIUNN-YI; LIU, WEN-HUANG; CHENG, HAO-CHUN; YEN, JUI-KANG
著作权人	SEMI-PHOTONICS CO., LTD.
专利号	WO2008045886A3
国家	世界知识产权组织
文献子类	发明申请
其他题名	Protection for the epitaxial structure of metal devices
英文摘要	Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
公开日期	2008-04-17
申请日期	2007-10-09
状态	未确认
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/43561]
专题	半导体激光器专利数据库
作者单位	SEMI-PHOTONICS CO., LTD.
推荐引用方式 GB/T 7714	FAN, FENG-HSU,DOAN, TRUNG TRI,TRAN, CHUONG ANH,et al. Protection for the epitaxial structure of metal devices. WO2008045886A3.

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