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	DIFFUSION, EVAPORATION AND RECRYSTALLIZATION IN HG-IMPLANTED AMORPHOUS SI
	WANG, KM; MA, SJ; SHI, BR; ZHAI, HY; LIU, XD; LIU, JT; LIU, XJ
刊名	SOLID STATE COMMUNICATIONS
	1995
卷号	93期号:2页码:155-158
关键词	SEMICONDUCTORS IMPURITIES IN SEMICONDUCTORS RADIATION EFFECTS HELIUM SURFACE SCATTERING
DOI	10.1016/0038-1098(94)00617-2
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6807408
专题	山东大学
作者单位	1.Department of Physics, Shandong University, Jinan, 250100 Shandong, China 2.Department of Physics, Shandong University, Jinan,
推荐引用方式 GB/T 7714	WANG, KM,MA, SJ,SHI, BR,et al. DIFFUSION, EVAPORATION AND RECRYSTALLIZATION IN HG-IMPLANTED AMORPHOUS SI[J]. SOLID STATE COMMUNICATIONS,1995,93(2):155-158.
APA	WANG, KM.,MA, SJ.,SHI, BR.,ZHAI, HY.,LIU, XD.,...&LIU, XJ.(1995).DIFFUSION, EVAPORATION AND RECRYSTALLIZATION IN HG-IMPLANTED AMORPHOUS SI.SOLID STATE COMMUNICATIONS,93(2),155-158.
MLA	WANG, KM,et al."DIFFUSION, EVAPORATION AND RECRYSTALLIZATION IN HG-IMPLANTED AMORPHOUS SI".SOLID STATE COMMUNICATIONS 93.2(1995):155-158.

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