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	Unified random access memory (URAM) by integration of a nanocrystal floating gate for nonvolatile memory and a partially depleted floating body for capacitorless 1T-DRAM.
	Choi,Yang-Kyu; Kim,Chung-Jin; Han,Jin-Woo; Kim,Sungho; Ryu,Seong-Wan
刊名	Solid State Electronics
	2009
卷号	Vol.53 No.3页码:389-391
关键词	RANDOM access memory NANOCRYSTALS SILICON-on-insulator technology METAL oxide semiconductor field-effect transistors CAPACITORS INFORMATION storage & retrieval systems SOLID state electronics
ISSN号	0038-1101
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6745132
专题	上海电子信息职业技术学院
作者单位	School of Electrical Engineering and Computer Science, Division of Electrical Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Republic of Korea
推荐引用方式 GB/T 7714	Choi,Yang-Kyu,Kim,Chung-Jin,Han,Jin-Woo,et al. Unified random access memory (URAM) by integration of a nanocrystal floating gate for nonvolatile memory and a partially depleted floating body for capacitorless 1T-DRAM.[J]. Solid State Electronics,2009,Vol.53 No.3:389-391.
APA	Choi,Yang-Kyu,Kim,Chung-Jin,Han,Jin-Woo,Kim,Sungho,&Ryu,Seong-Wan.(2009).Unified random access memory (URAM) by integration of a nanocrystal floating gate for nonvolatile memory and a partially depleted floating body for capacitorless 1T-DRAM..Solid State Electronics,Vol.53 No.3,389-391.
MLA	Choi,Yang-Kyu,et al."Unified random access memory (URAM) by integration of a nanocrystal floating gate for nonvolatile memory and a partially depleted floating body for capacitorless 1T-DRAM.".Solid State Electronics Vol.53 No.3(2009):389-391.

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