Observation of photo darkening in self assembled InGaAs/GaAs quantum dots

	Observation of photo darkening in self assembled InGaAs/GaAs quantum dots
	Zhang, Hongyi ; Chen, Yonghai ; Zhou, Xiaolong ; Jia, Yanan ; Ye, Xiaoling ; Xu, Bo ; Wang, Zhanguo
刊名	journal of applied physics
	2013
卷号	113 期号:17 页码:173508
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2013-08-27
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24289]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Zhang, Hongyi,Chen, Yonghai,Zhou, Xiaolong,et al. Observation of photo darkening in self assembled InGaAs/GaAs quantum dots[J]. journal of applied physics,2013,113(17):173508.
APA	Zhang, Hongyi.,Chen, Yonghai.,Zhou, Xiaolong.,Jia, Yanan.,Ye, Xiaoling.,...&Wang, Zhanguo.(2013).Observation of photo darkening in self assembled InGaAs/GaAs quantum dots.journal of applied physics,113(17),173508.
MLA	Zhang, Hongyi,et al."Observation of photo darkening in self assembled InGaAs/GaAs quantum dots".journal of applied physics 113.17(2013):173508.