QQ客服 官方微博 反馈留言

	Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering
	Fan, J.C.; W Ding, G.; Fung, S.; Xie, Z.; Zhong, Y.C.; Wong, K.S.; Brauer, G.; Anwand, W.; Grambole, D.; Ling, C.C.
刊名	Semiconductor Science and Technology
	2010
卷号	Vol.25 No.8页码:085009
关键词	Arsenic Hydrogen Nuclear reactors Radio Radio waves Scanning electron microscopy Secondary ion mass spectrometry Silicon compounds X ray diffraction X ray diffraction analysis X ray photoelectron spectroscopy Zinc
ISSN号	0268-1242
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6665711
专题	湖南大学
作者单位	1.Department of Physics, University of Hong Kong, Pokfulam Road, Hong Kong, Hong Kong 2.College of Physics and Microelectronic Science, Hunan University, Changsha 410082, China 3.Department of Physics, Hong Kong University of Science and Technology,
推荐引用方式 GB/T 7714	Fan, J.C.,W Ding, G.,Fung, S.,et al. Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering[J]. Semiconductor Science and Technology,2010,Vol.25 No.8:085009.
APA	Fan, J.C..,W Ding, G..,Fung, S..,Xie, Z..,Zhong, Y.C..,...&Ling, C.C..(2010).Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering.Semiconductor Science and Technology,Vol.25 No.8,085009.
MLA	Fan, J.C.,et al."Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering".Semiconductor Science and Technology Vol.25 No.8(2010):085009.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。