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	ANALYSIS OF DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR WITH HEAVILY DOPED P+-GAAS INXGA1-XAS STRAINED-LAYER SUPERLATTICE BASE
	ZENG, Z; QI, M; ZHANG, HT; LUO, JS
刊名	SUPERLATTICES AND MICROSTRUCTURES
	1993
卷号	13期号:2页码:169-172
ISSN号	0749-6036
DOI	10.1006/spmi.1993.1031
URL标识	查看原文
收录类别	SCIE ; SCOPUS
WOS记录号	WOS:A1993LA09500006
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6648201
专题	西安交通大学
推荐引用方式 GB/T 7714	ZENG, Z,QI, M,ZHANG, HT,et al. ANALYSIS OF DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR WITH HEAVILY DOPED P+-GAAS INXGA1-XAS STRAINED-LAYER SUPERLATTICE BASE[J]. SUPERLATTICES AND MICROSTRUCTURES,1993,13(2):169-172.
APA	ZENG, Z,QI, M,ZHANG, HT,&LUO, JS.(1993).ANALYSIS OF DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR WITH HEAVILY DOPED P+-GAAS INXGA1-XAS STRAINED-LAYER SUPERLATTICE BASE.SUPERLATTICES AND MICROSTRUCTURES,13(2),169-172.
MLA	ZENG, Z,et al."ANALYSIS OF DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR WITH HEAVILY DOPED P+-GAAS INXGA1-XAS STRAINED-LAYER SUPERLATTICE BASE".SUPERLATTICES AND MICROSTRUCTURES 13.2(1993):169-172.

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