Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires

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	Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires
	Zeng, XB ; Liao, XB ; Dai, ST ; Wang, B ; Xu, YY ; Xiang, XB ; Hu, ZH ; Diao, HW ; Kong, GL
	2005
会议名称	icmat symposium on science and technologies of nanomaterials
会议日期	dec 07-12, 2003
会议地点	singapore, singapore
关键词	chemical vapor deposition processes nanomaterials semiconducting silicon VISIBLE PHOTOLUMINESCENCE POROUS SILICON AMORPHOUS-SILICON SI SPECTROSCOPY FILMS NANOSTRUCTURES CONFINEMENT GROWTH
页码	23: 137-140
通讯作者	zeng, xb, chinese acad sci, inst semicond, state key lab surface phys, beijing 100083, peoples r china.
中文摘要	boron-doped (b-doped) silicon nanowires (sinws) have been prepared and characterized by raman scattering and photoluminescence (pl). b-doped sinws were grown by plasma enhanced chemical vapor deposition (pecvd), using diborane (b2h6) as the dopant gas. raman spectra show a band at 480cm(-1),which is attributed to amorphous silicon. photoluminescence at room temperature exhibits three distinct emission peaks at 1.34ev, 1.42ev, 1.47ev. possible reason for these is suggested.
英文摘要	boron-doped (b-doped) silicon nanowires (sinws) have been prepared and characterized by raman scattering and photoluminescence (pl). b-doped sinws were grown by plasma enhanced chemical vapor deposition (pecvd), using diborane (b2h6) as the dopant gas. raman spectra show a band at 480cm(-1),which is attributed to amorphous silicon. photoluminescence at room temperature exhibits three distinct emission peaks at 1.34ev, 1.42ev, 1.47ev. possible reason for these is suggested.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:35z (gmt). no. of bitstreams: 1 2442.pdf: 914364 bytes, checksum: 6dbf40db5c91b6904843bebc57d66ce0 (md5) previous issue date: 2005; nus, mat engn initiat, fac engn.; nus nanosci & nanotechnol initiat.; chinese acad sci, inst semicond, state key lab surface phys, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	nus, mat engn initiat, fac engn.; nus nanosci & nanotechnol initiat.
会议录	science and technology of nanomaterials - icmat 2003丛书标题: journal of metastable and nanocrystalline materials series
会议录出版者	trans tech publications ltd ; laublsrutistr 24, ch-8717 stafa-zurich, switzerland
会议录出版地	laublsrutistr 24, ch-8717 stafa-zurich, switzerland
学科主题	半导体材料
语种	英语
ISSN号	1422-6375
ISBN号	0-87849-953-9
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/10118]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zeng, XB,Liao, XB,Dai, ST,et al. Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires[C]. 见:icmat symposium on science and technologies of nanomaterials. singapore, singapore. dec 07-12, 2003.