Structural optimizations of SOI-based single-mode rib waveguide bends

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	Structural optimizations of SOI-based single-mode rib waveguide bends
	Chen, YY ; Yan, QF ; Yang, D ; Chen, SW ; Yu, JZ
	2004
会议名称	7th international conference on solid-state and integrated circuits technology
会议日期	oct 18-21, 2004
会议地点	beijing, peoples r china
关键词	silicon-on-insulator bend waveguide bend loss integrated optics SILICON-ON-INSULATOR
页码	vols 1- 3 proceedings: 2015-2017
通讯作者	chen, yy, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china.
中文摘要	effects of structure parameters on bend loss of rib silicon-on-insulator (sol) bend waveguides have been analyzed by means of effective index method (eim) and 2d bend loss formula. the simulation results indicate that the bend loss decreases with the increase of bend radius and waveguide width, as well as with the decrease of the step factor of the rib waveguide. moreover, the optional structure parameters have been found when bend waveguides are single-mode.
英文摘要	effects of structure parameters on bend loss of rib silicon-on-insulator (sol) bend waveguides have been analyzed by means of effective index method (eim) and 2d bend loss formula. the simulation results indicate that the bend loss decreases with the increase of bend radius and waveguide width, as well as with the decrease of the step factor of the rib waveguide. moreover, the optional structure parameters have been found when bend waveguides are single-mode.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:33z (gmt). no. of bitstreams: 1 2433.pdf: 141877 bytes, checksum: ed59ca6a5bf7215f583106c507b86dc3 (md5) previous issue date: 2004; chinese inst elect.; ieee beijing sect.; ieee elect devices soc.; ieee eds beijing chapter.; ieee solid-state circuits soc.; ieee sscs beijing chapter.; japan soc appl phys.; iee elect div.; ursi commiss d.; inst elect engineers korea.; natl nat sci fdn china.; beijing municipal bureau ind dev.; peking univ.; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	chinese inst elect.; ieee beijing sect.; ieee elect devices soc.; ieee eds beijing chapter.; ieee solid-state circuits soc.; ieee sscs beijing chapter.; japan soc appl phys.; iee elect div.; ursi commiss d.; inst elect engineers korea.; natl nat sci fdn china.; beijing municipal bureau ind dev.; peking univ.
会议录	2004 7th international conference on solid-state and integrated circuits technology
会议录出版者	ieee ; 345 e 47th st, new york, ny 10017 usa
会议录出版地	345 e 47th st, new york, ny 10017 usa
学科主题	光电子学
语种	英语
ISBN号	0-7803-8511-x
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/10100]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen, YY,Yan, QF,Yang, D,et al. Structural optimizations of SOI-based single-mode rib waveguide bends[C]. 见:7th international conference on solid-state and integrated circuits technology. beijing, peoples r china. oct 18-21, 2004.