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	Diode-end-pumped passively CW mode-locked Nd:YLF laser by the LT-In0.25Ga0.75as absorber
	Pan, Shu-Di[1]; He, Jing-Liang[1,2]; Hou, Yu-E.[2]; Fan, Ya-Xian[2]; Wang, Hui-Tian[2]; Wang, Yong-Gang[3]; Ma, Xiao-Yu[3]
	2006
卷号	42期号:10页码:1097-1100
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6599577
专题	山东师范大学
作者单位	1.[1] College of Physics and Electronics, Shandong Normal University, Ji'nan 250014, China 2.[2] National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China 3.[3] Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China
推荐引用方式 GB/T 7714	Pan, Shu-Di[1],He, Jing-Liang[1,2],Hou, Yu-E.[2],et al. Diode-end-pumped passively CW mode-locked Nd:YLF laser by the LT-In0.25Ga0.75as absorber[J],2006,42(10):1097-1100.
APA	Pan, Shu-Di[1].,He, Jing-Liang[1,2].,Hou, Yu-E.[2].,Fan, Ya-Xian[2].,Wang, Hui-Tian[2].,...&Ma, Xiao-Yu[3].(2006).Diode-end-pumped passively CW mode-locked Nd:YLF laser by the LT-In0.25Ga0.75as absorber.,42(10),1097-1100.
MLA	Pan, Shu-Di[1],et al."Diode-end-pumped passively CW mode-locked Nd:YLF laser by the LT-In0.25Ga0.75as absorber".42.10(2006):1097-1100.

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