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	Synthesis and characterization of GaN nanorods by ammoniating Ga2O3/Co films deposited on Si(111) substrates
	Qin, Lixia[1]; Xue, Chengshan[1]; Zhuang, Huizhao[1]; Yang, Zhaozhu[1]; Chen, Jinhua[1]; Li, Hong[1]
	2008
卷号	29期号:2页码:210-213
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6596315
专题	山东师范大学
作者单位	[1] Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, Jinan 250014, China
推荐引用方式 GB/T 7714	Qin, Lixia[1],Xue, Chengshan[1],Zhuang, Huizhao[1],et al. Synthesis and characterization of GaN nanorods by ammoniating Ga2O3/Co films deposited on Si(111) substrates[J],2008,29(2):210-213.
APA	Qin, Lixia[1],Xue, Chengshan[1],Zhuang, Huizhao[1],Yang, Zhaozhu[1],Chen, Jinhua[1],&Li, Hong[1].(2008).Synthesis and characterization of GaN nanorods by ammoniating Ga2O3/Co films deposited on Si(111) substrates.,29(2),210-213.
MLA	Qin, Lixia[1],et al."Synthesis and characterization of GaN nanorods by ammoniating Ga2O3/Co films deposited on Si(111) substrates".29.2(2008):210-213.

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