Electrical properties of Al2O3-doped ZnO varistors prepared by sol–gel process for device miniaturization

CORC > 上海硅酸盐研究所 > 中国科学院上海硅酸盐研究所 > 无机功能材料与器件重点实验室 > 期刊论文

	Electrical properties of Al2O3-doped ZnO varistors prepared by sol–gel process for device miniaturization
	Cheng LH(程丽红) ; Zheng LY(郑嘹赢) ; Meng L(孟磊) ; Li GR(李国荣) ; 谷岩99 ; 张福平99 ; 初瑞清99 ; 徐志军99
刊名	Ceramics International
	2012
卷号	38 期号:1 页码:S457-S461
ISSN号	0272-8842
其他题名	Electrical properties of Al2O3-doped ZnO varistors prepared by sol–gel process for device miniaturization
通讯作者	李国荣
中文摘要	Al2O3-doped ZnO varistors with high performance have been fabricated with nano composite powders, which were prepared by the sol–gel method. The xerogels, calcined powders and sintered material ceramics were fully characterized. The electrical properties and grain boundary characteristics were measured. The average grain size decreased from 4.4 mm to 3.0 mm and the breakdown voltage increased from 720 V/cm to 1160 V/cm as the amount of Al2O3 increased from 0.0 wt.% to 0.40 wt.%. 2 ms square-wave test indicates that the energy capability was better in a sol–gel derived ZnO varistor than a conventional sample and was enhanced by Al2O3 doping. Improved electrical properties of sol–gel derived ZnO varistors is attributed to the smaller grain size and more uniform distribution of additives. Al2O3-doped ZnO varistor obtained from sol–gel process is useful for device miniaturization.
学科主题	无机非金属材料
收录类别	SCI收录,EI收录
语种	英语
公开日期	2013-07-19
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/3698]
专题	上海硅酸盐研究所_无机功能材料与器件重点实验室_期刊论文
推荐引用方式 GB/T 7714	Cheng LH,Zheng LY,Meng L,et al. Electrical properties of Al2O3-doped ZnO varistors prepared by sol–gel process for device miniaturization[J]. Ceramics International,2012,38(1):S457-S461.
APA	程丽红.,郑嘹赢.,孟磊.,李国荣.,谷岩99.,...&徐志军99.(2012).Electrical properties of Al2O3-doped ZnO varistors prepared by sol–gel process for device miniaturization.Ceramics International,38(1),S457-S461.
MLA	程丽红,et al."Electrical properties of Al2O3-doped ZnO varistors prepared by sol–gel process for device miniaturization".Ceramics International 38.1(2012):S457-S461.