Low threading-dislocation-density Ge film on Si grown on a pitting Ge buffer layer

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	Low threading-dislocation-density Ge film on Si grown on a pitting Ge buffer layer
	Xue CL
	2008
会议名称	5th ieee international conference on group iv photonics
会议日期	sep 17-19, 2008
会议地点	sorrento, italy
关键词	SIGE/SI(100) EPITAXIAL-FILMS
页码	: 140-142
通讯作者	cheng, bw, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china.
中文摘要	a ge layer with a pitting surface can be obtained when the growth temperature is lowered to 290 degrees c. on the low temperature ge buffer layer with pits, high quality ge layer was grown at 600 degrees c with a threading dislocation density of similar to 1x10(5)cm(-2). according to channeling and random rutherford backscattering spectrometry spectra, a chi(min) value of 10% and 3.9% was found, respectively, at the ge/si interface and immediately under the surface peak. the root-mean-square surface roughness of ge film was 0.33nm.
英文摘要	a ge layer with a pitting surface can be obtained when the growth temperature is lowered to 290 degrees c. on the low temperature ge buffer layer with pits, high quality ge layer was grown at 600 degrees c with a threading dislocation density of similar to 1x10(5)cm(-2). according to channeling and random rutherford backscattering spectrometry spectra, a chi(min) value of 10% and 3.9% was found, respectively, at the ge/si interface and immediately under the surface peak. the root-mean-square surface roughness of ge film was 0.33nm.; zhangdi于2010-03-09批量导入; zhangdi于2010-03-09批量导入; ieee.; informat soc technol.; helios.; [cheng, b. w.; xue, h. y.; hu, d.; han, g. q.; zeng, y. g.; bai, a. q.; xue, c. l.; luo, l. p.; zuo, y. h.; wang, q. m.] chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
收录类别	其他
会议主办者	ieee.; informat soc technol.; helios.
会议录	2008 5th ieee international conference on group iv photonics
会议录出版者	ieee ; 345 e 47th st, new york, ny 10017 usa
会议录出版地	345 e 47th st, new york, ny 10017 usa
学科主题	光电子学
语种	英语
ISBN号	978-1-4244-1769-8
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/8342]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xue CL. Low threading-dislocation-density Ge film on Si grown on a pitting Ge buffer layer[C]. 见:5th ieee international conference on group iv photonics. sorrento, italy. sep 17-19, 2008.