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	An Improved Selective Area Growth Method in Fabrication of Electroabsorption Modulated Laser
	Wang H ; Zhu HL ; Cheng YB ; Chen D ; Zhang W ; Wang LS ; Zhang YX ; Sun Y ; Wang W
	2008
会议名称	asia optical fiber communication and optoelectronic exposition and conference
会议日期	oct 17-19, 2007
会议地点	shanghai, peoples r china
页码	conference proceedings: 490-492
通讯作者	wang, h, cas, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china.
中文摘要	an improved selective area growth (sag) method is proposed to better the fabrication and performance of the electroabsorption modulated laser the typical threshold current of the eml is 18ma, and the output power is 5.6mw at eam facet.
英文摘要	an improved selective area growth (sag) method is proposed to better the fabrication and performance of the electroabsorption modulated laser the typical threshold current of the eml is 18ma, and the output power is 5.6mw at eam facet.; zhangdi于2010-03-09批量导入; zhangdi于2010-03-09批量导入; opt soc amer.; ieee lasers & electroopt soc.; [wang, huan] cas, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
收录类别	其他
会议主办者	opt soc amer.; ieee lasers & electroopt soc.
会议录	aoe 2007 asia optical fiber communication & optoelectronic exposition & conference
会议录出版者	aoe ; di wang commercial centre, 6503, shun hing square, 65th flr, 5002 shen nan rd e, shenzhen, guangdong 518008, peoples r china
会议录出版地	di wang commercial centre, 6503, shun hing square, 65th flr, 5002 shen nan rd e, shenzhen, guangdong 518008, peoples r china
学科主题	光电子学
语种	英语
ISBN号	978-0-9789217-3-6
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/8320]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang H,Zhu HL,Cheng YB,et al. An Improved Selective Area Growth Method in Fabrication of Electroabsorption Modulated Laser[C]. 见:asia optical fiber communication and optoelectronic exposition and conference. shanghai, peoples r china. oct 17-19, 2007.

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