In-situ Boron-doped Low-stress LPCVD Polysilicon for Micromechanical Disk Resonator

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	In-situ Boron-doped Low-stress LPCVD Polysilicon for Micromechanical Disk Resonator
	Liu, YF ; Xie, J ; Yang, JL ; Tang, LJ ; Yang, FH
	2008
会议名称	9th international conference on solid-state and integrated-circuit technology
会议日期	oct 20-23, 2008
会议地点	beijing, peoples r china
关键词	FILMS
页码	vols 1-4: 2379-2382
通讯作者	liu, yf, chinese acad sci, inst semicond, beijing 100083, peoples r china.
中文摘要	polycrystalline silicon (polysilicon) has been used as an important structural material for microelectro-mechnical systems (mems) because of its compatibility with standard integrated circuit (ic) processes. as the structural layer of micromechanical high resonance frequency (high-f) and high quality factor (high-q) disk resonators, the low residual stress and low resistivity are desired for the polysilicon thin films. in the present work, we investigate the effect of deposition and annealing conditions on the residual stress and resistivity for in-situ deposited low pressure chemical vapor deposition (lpcvd) polysilicon films. low residual stress (-100 mpa) was achieved in in-situ boron-doped polysilicon films deposited at 570 degrees c and annealed at 1000 degrees c for 4 hr. the as-deposited amorphous polysilicon films were crystallized by the rapid thermal annealing and have the (111)-preferred orientation, the low tensile residual stress is expected for this annealed film, the detailed description on this work will be reported soon. the controllable residual stress and resistivity make these films suitable for high-q and bigh-f micro-mechanical disk resonators.
英文摘要	polycrystalline silicon (polysilicon) has been used as an important structural material for microelectro-mechnical systems (mems) because of its compatibility with standard integrated circuit (ic) processes. as the structural layer of micromechanical high resonance frequency (high-f) and high quality factor (high-q) disk resonators, the low residual stress and low resistivity are desired for the polysilicon thin films. in the present work, we investigate the effect of deposition and annealing conditions on the residual stress and resistivity for in-situ deposited low pressure chemical vapor deposition (lpcvd) polysilicon films. low residual stress (-100 mpa) was achieved in in-situ boron-doped polysilicon films deposited at 570 degrees c and annealed at 1000 degrees c for 4 hr. the as-deposited amorphous polysilicon films were crystallized by the rapid thermal annealing and have the (111)-preferred orientation, the low tensile residual stress is expected for this annealed film, the detailed description on this work will be reported soon. the controllable residual stress and resistivity make these films suitable for high-q and bigh-f micro-mechanical disk resonators.; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t07:08:17z (gmt). no. of bitstreams: 1 291.pdf: 1428290 bytes, checksum: caa6570230f39ba6b93180c39ae0a964 (md5) previous issue date: 2008; ieee beijing sect.; chinese inst elect.; ieee electron devices soc.; ieee eds beijing chapter.; ieee solid state circuits soc.; ieee circuites & syst soc.; ieee hong kong eds, sscs chapter.; ieee sscs beijing chapter.; japan soc appl phys.; elect div ieee.; ursi commiss d.; inst elect engineers korea.; assoc asia pacific phys soc.; peking univ, ieee eds student chapter.; [liu, yunfei; xie, jing; yang, jinling; tang, longjuan; yang, fuhua] chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	ieee beijing sect.; chinese inst elect.; ieee electron devices soc.; ieee eds beijing chapter.; ieee solid state circuits soc.; ieee circuites & syst soc.; ieee hong kong eds, sscs chapter.; ieee sscs beijing chapter.; japan soc appl phys.; elect div ieee.; ursi commiss d.; inst elect engineers korea.; assoc asia pacific phys soc.; peking univ, ieee eds student chapter.
会议录	2008 9th international conference on solid-state and integrated-circuit technology
会议录出版者	ieee ; 345 e 47th st, new york, ny 10017 usa
会议录出版地	345 e 47th st, new york, ny 10017 usa
学科主题	微电子学
语种	英语
ISBN号	978-1-4244-2185-5
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/8308]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liu, YF,Xie, J,Yang, JL,et al. In-situ Boron-doped Low-stress LPCVD Polysilicon for Micromechanical Disk Resonator[C]. 见:9th international conference on solid-state and integrated-circuit technology. beijing, peoples r china. oct 20-23, 2008.