| The Effective Mass, Band Gap, Device Characteristics, and Performance Considerations for AGNR and AGNRFETs | |
| Xia, Tongsheng; Wang, Yu; Zhang, Liujun; Li, Hongge | |
| 刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES
 |
| 2012 | |
| 卷号 | 59页码:2290-2295 |
| 关键词 | Band gap effective mass ON-current-OFF-current ratio tradeoff |
| ISSN号 | 0018-9383 |
| DOI | 10.1109/TED.2012.2201944 |
| URL标识 | 查看原文 |
| 收录类别 | SCIE ; EI |
| WOS记录号 | WOS:000307905200002 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/6579131 |
| 专题 | 北京航空航天大学 |
| 推荐引用方式 GB/T 7714 | Xia, Tongsheng,Wang, Yu,Zhang, Liujun,et al. The Effective Mass, Band Gap, Device Characteristics, and Performance Considerations for AGNR and AGNRFETs[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2012,59:2290-2295. |
| APA | Xia, Tongsheng,Wang, Yu,Zhang, Liujun,&Li, Hongge.(2012).The Effective Mass, Band Gap, Device Characteristics, and Performance Considerations for AGNR and AGNRFETs.IEEE TRANSACTIONS ON ELECTRON DEVICES,59,2290-2295. |
| MLA | Xia, Tongsheng,et al."The Effective Mass, Band Gap, Device Characteristics, and Performance Considerations for AGNR and AGNRFETs".IEEE TRANSACTIONS ON ELECTRON DEVICES 59(2012):2290-2295. |
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