Hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy

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	Hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy
	Nagai H ; Zhu QS ; Kawaguchi Y ; Hiramatsu K ; Sawaki N
刊名	applied physics letters
	1998
卷号	73 期号:14 页码:2024-2026
关键词	P-TYPE GAN DEEP LEVELS
ISSN号	0003-6951
通讯作者	nagai h,matsushita elect ind co ltd,kadoma,osaka 571,japan. 电子邮箱地址: sawaki@nuee.nagoya-u.ac.jp
中文摘要	hole trap levels in a mg-doped gan grown by metalorganic vapor phase epitaxy (movpe) are studied with deep level transient spectroscopy (dlts). the mg concentration of the sample was 4.8 x 10(19) cm(-3), but the hole concentration was as low as 1.3 x 10(17) cm(-3) at room temperature. the dlts spectrum has a dominant peak d-1 with activation energy of 0.41+/-0.05 ev, accompanied by two additional peaks with activation energies of 0.49+/-0.09 ev (d-2) and 0.59+/-0.05 ev (d-3). it was found that the dominant peak d-1 consists of five peaks, each of which has different activation energy and capture cross section. a relevant model for these levels is presented in relation to the mg-n-h complexes. (c) 1998 american institute of physics. [s0003-6951(98)04340-x].
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13096]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Nagai H,Zhu QS,Kawaguchi Y,et al. Hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy[J]. applied physics letters,1998,73(14):2024-2026.
APA	Nagai H,Zhu QS,Kawaguchi Y,Hiramatsu K,&Sawaki N.(1998).Hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy.applied physics letters,73(14),2024-2026.
MLA	Nagai H,et al."Hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy".applied physics letters 73.14(1998):2024-2026.