Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure

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	Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure
	Zhang JP ; Sun DZ ; Wang XL ; Kong MY ; Zeng YP ; Li JM ; Lin LY
刊名	applied physics letters
	1998
卷号	73 期号:17 页码:2471-2472
关键词	FIELD-EFFECT TRANSISTORS LUMINESCENCE SPECTRA ABSORPTION CHARGE
ISSN号	0003-6951
通讯作者	zhang jp,chinese acad sci,inst semicond,beijing 100083,peoples r china.
中文摘要	in this letter, we report on the observation of fermi-edge singularity in a modulation-doped algan/gan heterostructure grown on a c-face sapphire substrate by nh3 source molecular beam epitaxy. the two-dimensional electron gas (2deg) characteristic of the structure is manifested by variable temperature hall effect measurements down to 7 k. low-temperature photoluminescence (pl) spectra show a broad emission band originating from the recombination of the 2deg and localized holes. the enhancement in pl intensity in the high-energy side approaching fermi level was observed at temperatures below 20 k. at higher temperatures, the enhancement disappears because of the thermal broadening of the fermi edge. (c) 1998 american institute of physics. [s0003-6951(98)02543-1].
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13084]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang JP,Sun DZ,Wang XL,et al. Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure[J]. applied physics letters,1998,73(17):2471-2472.
APA	Zhang JP.,Sun DZ.,Wang XL.,Kong MY.,Zeng YP.,...&Lin LY.(1998).Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure.applied physics letters,73(17),2471-2472.
MLA	Zhang JP,et al."Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure".applied physics letters 73.17(1998):2471-2472.