Void-like defects in annealed Czochralski silicon

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	Void-like defects in annealed Czochralski silicon
	Gao M ; Duan XF ; Peng LM ; Li J
刊名	applied physics letters
	1998
卷号	73 期号:16 页码:2311-2312
关键词	CRYSTAL-ORIGINATED PARTICLES WAFERS SIO2
ISSN号	0003-6951
通讯作者	gao m,chinese acad sci,inst phys,beijing lab electron microscopy,pob 603,beijing 100080,peoples r china.
中文摘要	void-like defects of octahedron structure having {111} facets were observed in annealed czochralski silicon. the amorphous coverage of siox and sicx on the inner surface of the defects was identified using transmission electron microscopy and electron energy-loss spectroscopy. it is suggested that these defects are a kind of amorphous precipitate origin. a mechanism for the generation of these defects and the previously reported solid amorphous precipitates is proposed. (c) 1998 american institute of physics. [s0003-6951(98)02842-3].
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13082]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Gao M,Duan XF,Peng LM,et al. Void-like defects in annealed Czochralski silicon[J]. applied physics letters,1998,73(16):2311-2312.
APA	Gao M,Duan XF,Peng LM,&Li J.(1998).Void-like defects in annealed Czochralski silicon.applied physics letters,73(16),2311-2312.
MLA	Gao M,et al."Void-like defects in annealed Czochralski silicon".applied physics letters 73.16(1998):2311-2312.