Hydrogenation and anisotropic expansions in R3Fe29-xTx (R = Y, Ce, Nd, Sm, Gd, Tb and Dy; T = V and Cr)

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	Hydrogenation and anisotropic expansions in R3Fe29-xTx (R = Y, Ce, Nd, Sm, Gd, Tb and Dy; T = V and Cr)
	Han XF ; Lin LY ; Miyazaki T ; Yang FM ; Xu RG ; Wang XH ; Pan HG ; Chen CP
刊名	journal of materials science & technology
	1999
卷号	15 期号:1 页码:5-9
关键词	HARD MAGNETIC-PROPERTIES
ISSN号	1005-0302
通讯作者	han xf,chinese acad sci,inst semicond,ctr mat sci,beijing 100083,peoples r china.
中文摘要	a systematic study of the phase formation, structure and magnetic properties of the r3fe29-xtx compounds (r=y, ce, nd, sm, gd, tb, and dy; t=v and cr) has been performed upon hydrogenation. the lattice constants and the unit cell volume of r3fe29-xtxhy decrease with increasing r atomic number from nd to dy, except for ce, reflecting the lanthanide contraction. regular anisotropic expansions mainly along the a- and b-axis rather than along the c-axis are observed for all of the compounds upon hydrogenation. hydrogenation leads to an increase in the curie temperature and a corresponding increase in the saturation magnetization at room temperature for each compound. first order magnetization processes (fomp) occur in the external magnetic fields for nd3fe24.5cr4.5h5.0, tb3fe27.0cr2.0h2.8, and gd3fe28.0cr1.0h4.2 compounds.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13008]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Han XF,Lin LY,Miyazaki T,et al. Hydrogenation and anisotropic expansions in R3Fe29-xTx (R = Y, Ce, Nd, Sm, Gd, Tb and Dy; T = V and Cr)[J]. journal of materials science & technology,1999,15(1):5-9.
APA	Han XF.,Lin LY.,Miyazaki T.,Yang FM.,Xu RG.,...&Chen CP.(1999).Hydrogenation and anisotropic expansions in R3Fe29-xTx (R = Y, Ce, Nd, Sm, Gd, Tb and Dy; T = V and Cr).journal of materials science & technology,15(1),5-9.
MLA	Han XF,et al."Hydrogenation and anisotropic expansions in R3Fe29-xTx (R = Y, Ce, Nd, Sm, Gd, Tb and Dy; T = V and Cr)".journal of materials science & technology 15.1(1999):5-9.