Stability investigation of cubic GaN films grown by metalorganic chemical vapor deposition on GaAs (001)

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	Stability investigation of cubic GaN films grown by metalorganic chemical vapor deposition on GaAs (001)
	Sun XL ; Yang H ; Zheng LX ; Xu DP ; Li JB ; Wang YT ; Li GH ; Wang ZG
刊名	applied physics letters
	1999
卷号	74 期号:19 页码:2827-2829
关键词	RAMAN-SPECTROSCOPY PHASE PHONONS
ISSN号	0003-6951
通讯作者	sun xl,chinese acad sci,inst semicond,natl res ctr optoelect technol,beijing 100083,peoples r china.
中文摘要	the thermal stability of cubic-phase gan (c-gan) films are investigated by photoluminescence (pl) and raman scattering spectroscopy. c-gan films are grown on gaas (001) substrates by metalorganic chemical vapor deposition. pl measurements show that the near-band-edge emissions in the as-grown gan layers and thermally treated samples are mainly from c-gan. no degradation of the optical qualities is observed after thermal annealing. raman scattering spectroscopy shows that the intensity of the e-2 peak from hexagonal gan grains increases with annealing temperature for the samples with poor crystal quality, while thermal annealing up to 1000 degrees c has no obvious effect on the samples with high crystal quality. (c) 1999 american institute of physics. [s0003-6951(99)04719-1].
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12920]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Sun XL,Yang H,Zheng LX,et al. Stability investigation of cubic GaN films grown by metalorganic chemical vapor deposition on GaAs (001)[J]. applied physics letters,1999,74(19):2827-2829.
APA	Sun XL.,Yang H.,Zheng LX.,Xu DP.,Li JB.,...&Wang ZG.(1999).Stability investigation of cubic GaN films grown by metalorganic chemical vapor deposition on GaAs (001).applied physics letters,74(19),2827-2829.
MLA	Sun XL,et al."Stability investigation of cubic GaN films grown by metalorganic chemical vapor deposition on GaAs (001)".applied physics letters 74.19(1999):2827-2829.