Self-organization of the InGaAs GaAs quantum dots superlattice

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	Self-organization of the InGaAs GaAs quantum dots superlattice
	Zhuang QD ; Li HX ; Pan L ; Li JM ; Kong MY ; Lin LY
刊名	journal of crystal growth
	1999
卷号	201 期号:0 页码:1161-1163
关键词	quantum dots superlattice vertical alignment ISLANDS SURFACES GROWTH X-RAY-DIFFRACTION
ISSN号	0022-0248
通讯作者	zhuang qd,chinese acad sci,inst semicond,novel mat ctr,beijing 100083,peoples r china.
中文摘要	the mechanism of self-organization of quantum dots (qds) during the growth of ingaas/gaas multilayers on gaas (1 0 0) was investigated with cross-sectional transmission electron microscopy (xtem), and double-crystal x-ray diffraction (dcxd). we found that the qds spacing in the first layer can affect the vertical alignment of qds. there seems to exist one critical lateral qd spacing, below which merging of qds with different initial size is found to be the dominant mechanism leading to perfect vertical alignment. once the critical value of qds spacing is reached, the ingaas qds of the first layer are simply reproduced in the upper layers. the x-ray rocking curve clearly shows two sets of satellite peaks, which correspond to the qds superlattice, and multi-quantum wells (qw) formed by the wetting layers around qds. (c) 1999 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12906]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhuang QD,Li HX,Pan L,et al. Self-organization of the InGaAs GaAs quantum dots superlattice[J]. journal of crystal growth,1999,201(0):1161-1163.
APA	Zhuang QD,Li HX,Pan L,Li JM,Kong MY,&Lin LY.(1999).Self-organization of the InGaAs GaAs quantum dots superlattice.journal of crystal growth,201(0),1161-1163.
MLA	Zhuang QD,et al."Self-organization of the InGaAs GaAs quantum dots superlattice".journal of crystal growth 201.0(1999):1161-1163.