Investigation on quality of cubic GaN/GaAs(100) by double-crystal X-ray diffraction

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Investigation on quality of cubic GaN/GaAs(100) by double-crystal X-ray diffraction
	Xu DP ; Wang YT ; Yang H ; Zheng LX ; Li JB ; Duan LH ; Wu RH
刊名	science in china series a-mathematics physics astronomy
	1999
卷号	42 期号:5 页码:517-522
关键词	cubic GaN hexagonal X-ray diffraction MOCVD SUBSTRATE NITRIDATION OPTICAL-PROPERTIES GAN GAAS GROWTH MOLECULAR-BEAM EPITAXY
ISSN号	1006-9283
通讯作者	xu dp,chinese acad sci,inst semicond,natl res ctr optoelect technol,beijing 100083,peoples r china.
中文摘要	cubic gan was grown on gaas(100) by low pressure metal organic chemical vapor deposition (mocvd). x-ray diffraction, scanning electron microscope (sem) and photoluminescence (pl) spectra were performed to characterize the quality of the gan film. the pl spectra of cubic gan thin films being thicker than 1.5 mu m were reported. triple-crystal diffraction to analyze orientation distributions and strain of the thin films was also demonstrated.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12866]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu DP,Wang YT,Yang H,et al. Investigation on quality of cubic GaN/GaAs(100) by double-crystal X-ray diffraction[J]. science in china series a-mathematics physics astronomy,1999,42(5):517-522.
APA	Xu DP.,Wang YT.,Yang H.,Zheng LX.,Li JB.,...&Wu RH.(1999).Investigation on quality of cubic GaN/GaAs(100) by double-crystal X-ray diffraction.science in china series a-mathematics physics astronomy,42(5),517-522.
MLA	Xu DP,et al."Investigation on quality of cubic GaN/GaAs(100) by double-crystal X-ray diffraction".science in china series a-mathematics physics astronomy 42.5(1999):517-522.