Effect of rapid thermal annealing on Ti-AlN interfaces

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	Effect of rapid thermal annealing on Ti-AlN interfaces
	Wang YX ; Chen X
刊名	applied surface science
	1999
卷号	148 期号:3-4 页码:235-240
关键词	electronic packaging surface analysis interface reaction TITANIUM ALUMINUM NITRIDE
ISSN号	0169-4332
通讯作者	wang yx,chinese acad sci,inst semicond,beijing 100083,peoples r china.
中文摘要	the interface diffusion, reaction, and adherence of rapid thermal annealed ti/aln were investigated by res, aes, sims, xrd and a scratch test. the experimental results show that diffusion and reaction occurs at the interface of ti/aln when the sample is rapidly annealed. during annealing, both the o adsorbed on the surface and doped in the aln substrate diffuse into the ti film. at low temperature tio2 is produced. at higher temperature o reacts with the diffused al in the ti film and produces an al2o3 layer in the middle of the film. n diffuses into the ti film and produces tin with an interface reaction. ti oxide is produced at the interface between the film and the substrate. scratch test results show that interface adherence is distinctly improved by rapid annealing at low temperature and decreases at higher temperature. (c) 1999 elsevier science b.v. all rights reserved.
学科主题	半导体化学
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12862]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang YX,Chen X. Effect of rapid thermal annealing on Ti-AlN interfaces[J]. applied surface science,1999,148(3-4):235-240.
APA	Wang YX,&Chen X.(1999).Effect of rapid thermal annealing on Ti-AlN interfaces.applied surface science,148(3-4),235-240.
MLA	Wang YX,et al."Effect of rapid thermal annealing on Ti-AlN interfaces".applied surface science 148.3-4(1999):235-240.