Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(311)B surfaces

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	Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(311)B surfaces
	Xu B
刊名	journal of crystal growth
	1999
卷号	205 期号:4 页码:481-488
关键词	two-dimensional (2D) ordering quantum dot array InxGa1-xAs self-assembly molecular beam epitaxy GaAs(311)B high-index CHEMICAL-VAPOR-DEPOSITION ORGANIZED GROWTH INAS ISLANDS GAAS GAAS(100) ALIGNMENT MATRIX ARRAYS DISKS MOLECULAR-BEAM-EPITAXY
ISSN号	0022-0248
通讯作者	xu hz,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	the two-dimensional (2d) ordering of self-assembled inxga1-xas quantum dots (qds) fabricated on gaas(3 1 1)b surface by molecular beam epitaxy (mbe) are reported. the qds are aligned into rows differing from the direction of the misorientation of the substrate, and strongly dependent on the mole in content x of inxga1-as-x solid solution. the ordering alignment deteriorates significantly as the in content is increased to above 0.5. the 2d ordering can be described as a centered rectangular unit mesh with the two sides parallel to [0 1 (1) over bar] and [(2) over bar 3 3], respectively. their relative arrangement seems to be determined by a combination of the strongly repulsive elastic interaction between the neighboring islands and the minimization of the strain energy of the whole system. the ordering also helps to improve the size homogeneity of the ingaas islands. the photoluminescence (pl) result demonstrates that qds grown on (3 1 1)b have the narrowest linewidth and the strongest integrated intensity, compared to those on (1 0 0) and other high-index planes under the same condition. (c) 1999 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12806]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu B. Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(311)B surfaces[J]. journal of crystal growth,1999,205(4):481-488.
APA	Xu B.(1999).Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(311)B surfaces.journal of crystal growth,205(4),481-488.
MLA	Xu B."Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(311)B surfaces".journal of crystal growth 205.4(1999):481-488.