Improvement of photoluminescence of strained SiGe/Si layers on patterned Si substrate

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	Improvement of photoluminescence of strained SiGe/Si layers on patterned Si substrate
	Si JJ ; Guo LW ; Yang QQ ; Gao JH ; Teng D ; Zhou JM ; Wang QM
刊名	solid state communications
	1999
卷号	112 期号:5 页码:255-259
关键词	nanostructures semiconductors thin films luminescence GROWTH WELLS SILICON QUANTUM WIRES
ISSN号	0038-1098
通讯作者	si jj,univ electrocommun,dept commun & syst,morisaky nozaki lab,1-5-1 chofugaoka,chofu,tokyo 1828585,japan.
中文摘要	a strained sige/si superlattice structure has been grown on a patterned si substrate and its photoluminescence has been studied. the patterned substrate is composed of pyramid-like structures. it is found that there are ge-rich sige quantum wires (qwr) at the crossings of adjacent planes that form the pyramid-like structure. photoluminescence of strained the sige layer grown on a planar substrate and a patterned substrate was compared. the total intensity of photoluminescence from the patterned substrate was 5.2 times larger than that from the planar substrates. the result is discussed and it is believed that this increase in photoluminescence is related to the observed qwrs. (c) 1999 elsevier science ltd. all rights reserved.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12798]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Si JJ,Guo LW,Yang QQ,et al. Improvement of photoluminescence of strained SiGe/Si layers on patterned Si substrate[J]. solid state communications,1999,112(5):255-259.
APA	Si JJ.,Guo LW.,Yang QQ.,Gao JH.,Teng D.,...&Wang QM.(1999).Improvement of photoluminescence of strained SiGe/Si layers on patterned Si substrate.solid state communications,112(5),255-259.
MLA	Si JJ,et al."Improvement of photoluminescence of strained SiGe/Si layers on patterned Si substrate".solid state communications 112.5(1999):255-259.