Sputtering of ZnO buffer layer on Si for GaN blue light emitting materials

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Sputtering of ZnO buffer layer on Si for GaN blue light emitting materials
	He HB ; Fan ZX ; Yao ZY ; Tang ZS
刊名	science in china series e-technological sciences
	2000
卷号	43 期号:1 页码:55-59
关键词	light emitting material ZnO magnetron sputtering structure X-ray rocking curve FILMS GROWTH
ISSN号	1006-9321
通讯作者	fan zx,chinese acad sci,shanghai inst opt & fine mech,shanghai 201800,peoples r china.
中文摘要	the preparation of high quality zno/si substrates for the growth of gan blue light emitting materials is considered. zno thin films have been deposited on si(100) and si(lll) substrates by conventional magnetron sputtering. morphology, crystallinity and c-axis preferred orientation of zno thin films have been investigated by transmitting electron microscopy (tem), x-ray diffraction (xrd) and x-ray rocking curve (xrc). it is proved that the zno thin films have perfect structure. the full-width-at-half-maximum (fwhm) of the zno(002) xrc of these films is about 1 degrees, while the minimum is 0.353 degrees. this result is better than the minimum fwhm (about 2 degrees) reported by other research groups. moreover, comparison and discussion are given on film structure of zno/si(100) and zno/si(lll).
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12682]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	He HB,Fan ZX,Yao ZY,et al. Sputtering of ZnO buffer layer on Si for GaN blue light emitting materials[J]. science in china series e-technological sciences,2000,43(1):55-59.
APA	He HB,Fan ZX,Yao ZY,&Tang ZS.(2000).Sputtering of ZnO buffer layer on Si for GaN blue light emitting materials.science in china series e-technological sciences,43(1),55-59.
MLA	He HB,et al."Sputtering of ZnO buffer layer on Si for GaN blue light emitting materials".science in china series e-technological sciences 43.1(2000):55-59.