Absorption spectra of nanocrystalline silicon embedded in SiO2 matrix
Ma ZX ; Liao XB ; Kong GL ; Chu JH
刊名materials letters
2000
卷号42期号:6页码:367-370
关键词nanocrystalline silicon absorption coefficient photoluminescence POROUS SILICON
ISSN号0167-577x
通讯作者ma zx,chinese acad sci,shanghai inst tech phys,natl lab infrared phys,shanghai 200083,peoples r china.
中文摘要nanocrystalline silicon (nc-si) embedded sio2 matrix has been formed by annealing the siox films fabricated by plasma-enhanced chemical vapor deposition (pecvd) technique. absorption coefficient and photoluminescence of the films have been measured at room temperature. the experimental results show that there is an "aurbach-like" b exponential absorption in the spectral range of 2.0-3.0 ev. the relationship of (alpha hv)(1/2) proportional to(hv - e-g) demonstrates that the luminescent nc-si have an indirect band structure. the existence of stokes shift between photoluminescence and absorption edge indicates that radiative combination can take place not only between electron states and hole states but also between shallow trap states of electrons and holes. (c) 2000 elsevier science b.v. all rights reserved.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-08-12
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/12666]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Ma ZX,Liao XB,Kong GL,et al. Absorption spectra of nanocrystalline silicon embedded in SiO2 matrix[J]. materials letters,2000,42(6):367-370.
APA Ma ZX,Liao XB,Kong GL,&Chu JH.(2000).Absorption spectra of nanocrystalline silicon embedded in SiO2 matrix.materials letters,42(6),367-370.
MLA Ma ZX,et al."Absorption spectra of nanocrystalline silicon embedded in SiO2 matrix".materials letters 42.6(2000):367-370.
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