Absorption spectra of nanocrystalline silicon embedded in SiO2 matrix | |
Ma ZX ; Liao XB ; Kong GL ; Chu JH | |
刊名 | materials letters |
2000 | |
卷号 | 42期号:6页码:367-370 |
关键词 | nanocrystalline silicon absorption coefficient photoluminescence POROUS SILICON |
ISSN号 | 0167-577x |
通讯作者 | ma zx,chinese acad sci,shanghai inst tech phys,natl lab infrared phys,shanghai 200083,peoples r china. |
中文摘要 | nanocrystalline silicon (nc-si) embedded sio2 matrix has been formed by annealing the siox films fabricated by plasma-enhanced chemical vapor deposition (pecvd) technique. absorption coefficient and photoluminescence of the films have been measured at room temperature. the experimental results show that there is an "aurbach-like" b exponential absorption in the spectral range of 2.0-3.0 ev. the relationship of (alpha hv)(1/2) proportional to(hv - e-g) demonstrates that the luminescent nc-si have an indirect band structure. the existence of stokes shift between photoluminescence and absorption edge indicates that radiative combination can take place not only between electron states and hole states but also between shallow trap states of electrons and holes. (c) 2000 elsevier science b.v. all rights reserved. |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/12666] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Ma ZX,Liao XB,Kong GL,et al. Absorption spectra of nanocrystalline silicon embedded in SiO2 matrix[J]. materials letters,2000,42(6):367-370. |
APA | Ma ZX,Liao XB,Kong GL,&Chu JH.(2000).Absorption spectra of nanocrystalline silicon embedded in SiO2 matrix.materials letters,42(6),367-370. |
MLA | Ma ZX,et al."Absorption spectra of nanocrystalline silicon embedded in SiO2 matrix".materials letters 42.6(2000):367-370. |
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