Effective method for evaluation of semiconductor laser quality

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Effective method for evaluation of semiconductor laser quality
	Li HY ; Qi LY ; Shi JW ; Jin ES ; Li ZT ; Gao DS ; Yu JZ ; Guo L
刊名	microelectronics reliability
	2000
卷号	40 期号:2 页码:333-337
关键词	RELIABILITY
ISSN号	0026-2714
通讯作者
中文摘要	the measurements of one hundred 1.3 mu m planar buried crescent (pbc) structure ingaasp/inp lasers demonstrate that parameters given by the electrical derivative of varied temperature and the variation of the parameters with temperature can be used to appraise the quality and reliability of semiconductor lasers effectual. by measurement of electrical derivative curves one can evaluate the quality of epitaxial wafer and chip, find the problems in the material and the technology, offer the useful information on increasing the quality and improving the technology of devices. (c) 2000 elsevier science ltd. all rights reserved.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12664]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li HY,Qi LY,Shi JW,et al. Effective method for evaluation of semiconductor laser quality[J]. microelectronics reliability,2000,40(2):333-337.
APA	Li HY.,Qi LY.,Shi JW.,Jin ES.,Li ZT.,...&Guo L.(2000).Effective method for evaluation of semiconductor laser quality.microelectronics reliability,40(2),333-337.
MLA	Li HY,et al."Effective method for evaluation of semiconductor laser quality".microelectronics reliability 40.2(2000):333-337.