Strong resonant intersubband magnetopolaron effect in heavily modulation-doped GaAs/AlGaAs single quantum wells at high magnetic fields

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	Strong resonant intersubband magnetopolaron effect in heavily modulation-doped GaAs/AlGaAs single quantum wells at high magnetic fields
	Wang YJ ; Leem YA ; McCombe BD ; Wu XG ; Peeters FM ; Jones ED ; Reno JR ; Lee XY ; Jiang HW
刊名	physica e
	2000
卷号	6 期号:1-4 页码:195-200
关键词	electron cyclotron resonance electron-phonon interaction subband POLARON-CYCLOTRON-RESONANCE PHONON MODES GAAS HETEROSTRUCTURES
ISSN号	1386-9477
通讯作者	wang yj,florida state univ,natl high magnet field lab,1800 e paul dirac dr,tallahassee,fl 32310 usa.
中文摘要	electron cyclotron resonance (cr) has been studied in magnetic fields up to 32 t in two heavily modulation-delta-doped gaas/al0.3ga0.7as single quantum well samples. little effect on electron cr is observed in either sample in the region of resonance with the gaas lo phonons. however, above the lo-phonon frequency energy e-lo at b > 27 t, electron cr exhibits a strong avoided-level-crossing splitting for both samples at energies close to e-lo + (e-2 - e-1), where e-2, and e-1 are the energies of the bottoms of the second and the first subbands, respectively. the energy separation between the two branches is large, reaching a minimum of about 40 cm(-1) around 30.5 t for both samples. this splitting is due to a three-level resonance between the second li, of the first electron subband and the lowest ll of the second subband plus an lo phonon. the large splitting in the presence: of high electron densities is due to the absence of occupation (pauli-principle) effects in the final states and weak screening for this three-level process. (c) 2000 published by elsevier science b.v. all rights reserved.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12662]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang YJ,Leem YA,McCombe BD,et al. Strong resonant intersubband magnetopolaron effect in heavily modulation-doped GaAs/AlGaAs single quantum wells at high magnetic fields[J]. physica e,2000,6(1-4):195-200.
APA	Wang YJ.,Leem YA.,McCombe BD.,Wu XG.,Peeters FM.,...&Jiang HW.(2000).Strong resonant intersubband magnetopolaron effect in heavily modulation-doped GaAs/AlGaAs single quantum wells at high magnetic fields.physica e,6(1-4),195-200.
MLA	Wang YJ,et al."Strong resonant intersubband magnetopolaron effect in heavily modulation-doped GaAs/AlGaAs single quantum wells at high magnetic fields".physica e 6.1-4(2000):195-200.