Microstructure of SiOx : H films prepared by plasma enhanced chemical vapor deposition

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	Microstructure of SiOx : H films prepared by plasma enhanced chemical vapor deposition
	Ma ZX ; Liao XB ; Kong GL ; Chu JH
刊名	chinese physics
	2000
卷号	9 期号:4 页码:309-312
关键词	RAMAN-SCATTERING SILICON PHOTOLUMINESCENCE SPECTRA
ISSN号	1009-1963
通讯作者	ma zx,chinese acad sci,ctr condensed matter phys,inst semicond,state key lab surface phys,beijing 100083,peoples r china.
中文摘要	the micro-raman spectroscopy and infrared (ir) spectroscopy have been performed for the study of the microstructure of amorphous hydrogenated oxidized silicon (alpha-siox,:h) films prepared by plasma enhanced chemical vapor deposition technique. it is found that a-siox:h consists of two phases: an amorphous silicon-rich phase and an oxygen-rich phase mainly comprised of hsi-sio2 and hsi-o-3. the raman scattering; results exhibit that the frequency of to-like mode of amorphous silicon red-shifts with decreasing size of silicon-rich region. this is related to the quantum confinement effects, similar to the nanocrystalline silicon.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12638]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ma ZX,Liao XB,Kong GL,et al. Microstructure of SiOx : H films prepared by plasma enhanced chemical vapor deposition[J]. chinese physics,2000,9(4):309-312.
APA	Ma ZX,Liao XB,Kong GL,&Chu JH.(2000).Microstructure of SiOx : H films prepared by plasma enhanced chemical vapor deposition.chinese physics,9(4),309-312.
MLA	Ma ZX,et al."Microstructure of SiOx : H films prepared by plasma enhanced chemical vapor deposition".chinese physics 9.4(2000):309-312.