The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53Ga0.47As multilayer on InP substrate

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	The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53Ga0.47As multilayer on InP substrate
	Ye XL; Xu B
刊名	journal of crystal growth
	2000
卷号	212 期号:1-2 页码:360-363
关键词	self-organized quantum dots InAs/In0.53Ga0.47As multilayer InP substrate MBE MOLECULAR-BEAM-EPITAXY INAS ISLANDS GROWTH MATRIX GAAS
ISSN号	0022-0248
通讯作者	sun zz,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	self-organized inas/in0.53ga0.47as quantum dot (qd) multilayers were grown on inp substrate by molecular beam epitaxy. the structural and optical properties were characterized by using cross-sectional transmission electron microscopy (tem) and photoluminescence (pl), respectively. vertically aligned inas quantum dots multilayer on inp substrate is demonstrated for the first time. photoluminescence with a line width of similar to 26 mev was observed from the qds multilayer. (c) 2000 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12632]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ye XL,Xu B. The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53Ga0.47As multilayer on InP substrate[J]. journal of crystal growth,2000,212(1-2):360-363.
APA	Ye XL,&Xu B.(2000).The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53Ga0.47As multilayer on InP substrate.journal of crystal growth,212(1-2),360-363.
MLA	Ye XL,et al."The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53Ga0.47As multilayer on InP substrate".journal of crystal growth 212.1-2(2000):360-363.