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	Photoluminescence study of InAs/GaAs self-organized quantum dots with bimodal size distribution
	Guo ZS ; Wang HL ; Ning D ; Feng SL
刊名	chinese physics
	2000
卷号	9期号:5页码:384-388
关键词	MOLECULAR-BEAM EPITAXY ELECTRONIC-STRUCTURE TEMPERATURE-DEPENDENCE CARRIER RELAXATION GROWTH
ISSN号	1009-1963
通讯作者	guo zs,chinese acad sci,inst semicond,state key lab superiattices & microstruct,beijing 100083,peoples r china.
中文摘要	we have investigated the temperature dependence of the photoluminescence (pl) spectrum of self-organized inas/gaas quantum dots. a distinctive double-peak feature of the pl spectra from quantum dots has been observed, and a bimodal distribution of dot sizes has also been confirmed by scanning tunneling microscopy image for uncapped sample. the power-dependent pl study demonstrates that the distinctive pl emission peaks are associated with the ground-state emission of islands in different size branches. the temperature-dependent pl study shows that the pl quenching temperature for different dot families is different. due to lacking of the couple between quantum dots, an unusual temperature dependence of the linewidth and peak energy of the dot ensemble photoluminescence has not been observed. in addition, we have tuned the emission wavelength of inas qds to 1.3 mu m at room temperature.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12614]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Guo ZS,Wang HL,Ning D,et al. Photoluminescence study of InAs/GaAs self-organized quantum dots with bimodal size distribution[J]. chinese physics,2000,9(5):384-388.
APA	Guo ZS,Wang HL,Ning D,&Feng SL.(2000).Photoluminescence study of InAs/GaAs self-organized quantum dots with bimodal size distribution.chinese physics,9(5),384-388.
MLA	Guo ZS,et al."Photoluminescence study of InAs/GaAs self-organized quantum dots with bimodal size distribution".chinese physics 9.5(2000):384-388.

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