Characteristics of circular waveguide photodetectors using SiGe/Si multiple quantum wells

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Characteristics of circular waveguide photodetectors using SiGe/Si multiple quantum wells
	Li C ; Yang QQ ; Wang HJ ; Cheng BW ; Yu JZ ; Wang QM
刊名	optical materials
	2000
卷号	14 期号:3 页码:267-269
关键词	circular waveguide photodetector responsivity quantum efficiency SiGe/Si MQW 1.3 MU-M
ISSN号	0925-3467
通讯作者	li c,chinese acad sci,inst semicond,natl integrated optoelect lab,pob 912,beijing 100083,peoples r china.
中文摘要	we report on the fabrication of circular waveguide photodetectors with a response near 1.3 mu m wavelength using sige/si multiple quantum wells. the quantum efficiency of the circular waveguide photodetector is improved when compared with that of the rib waveguide photodetector in the same wavelength at 1.3 mu m the frequency response of the photodetectors is simulated. the emciency-bandwidth product of the circular waveguide photodetectors is improved correspondingly. (c) 2000 published by elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12566]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li C,Yang QQ,Wang HJ,et al. Characteristics of circular waveguide photodetectors using SiGe/Si multiple quantum wells[J]. optical materials,2000,14(3):267-269.
APA	Li C,Yang QQ,Wang HJ,Cheng BW,Yu JZ,&Wang QM.(2000).Characteristics of circular waveguide photodetectors using SiGe/Si multiple quantum wells.optical materials,14(3),267-269.
MLA	Li C,et al."Characteristics of circular waveguide photodetectors using SiGe/Si multiple quantum wells".optical materials 14.3(2000):267-269.